Polarity dependence of the electrical characteristics of Ag reflectors for high-power GaN-based light emitting diodes
DC Field | Value | Language |
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dc.contributor.author | Park, Jae-Seong | - |
dc.contributor.author | Han, Jaecheon | - |
dc.contributor.author | Ha, Jun-Seok | - |
dc.contributor.author | Seong, Tae-Yeon | - |
dc.date.accessioned | 2021-09-05T09:24:17Z | - |
dc.date.available | 2021-09-05T09:24:17Z | - |
dc.date.created | 2021-06-15 | - |
dc.date.issued | 2014-04-28 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/98733 | - |
dc.description.abstract | We report on the polarity dependence of the electrical properties of Ag reflectors for high-power GaN-based light-emitting diodes. The (0001) c-plane samples become ohmic after annealing in air. However, the (11-22) semi-polar samples are non-ohmic after annealing, although the 300 degrees C-annealed sample shows the lowest contact resistivity. The X-ray photoemission spectroscopy (XPS) results show that the Ga 2p core level for the c-plane samples experiences larger shift toward the valence band than that for the semi-polar samples. The XPS depth profile results show that unlike the c-plane samples, the semi-polar samples contain some amounts of oxygen at the Ag/GaN interface regions. The outdiffusion of Ga atoms is far more significant in the c-plane samples than in the semi-polar samples, whereas the outdiffusion of N atoms is relatively less significant in the c-plane samples. On the basis of the electrical and XPS results, the polarity dependence of the electrical properties is described and discussed (C) 2014 AIP Publishing LLC. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | MULTIPLE-QUANTUM WELLS | - |
dc.subject | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject | IMPURITY INCORPORATION | - |
dc.subject | ELECTRONIC-STRUCTURES | - |
dc.subject | OHMIC CONTACTS | - |
dc.subject | PLANE | - |
dc.subject | PHOTOLUMINESCENCE | - |
dc.subject | POLARIZATION | - |
dc.subject | IMPROVEMENT | - |
dc.subject | SURFACES | - |
dc.title | Polarity dependence of the electrical characteristics of Ag reflectors for high-power GaN-based light emitting diodes | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Seong, Tae-Yeon | - |
dc.identifier.doi | 10.1063/1.4874631 | - |
dc.identifier.scopusid | 2-s2.0-84899800247 | - |
dc.identifier.wosid | 000336142500036 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.104, no.17 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 104 | - |
dc.citation.number | 17 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | MULTIPLE-QUANTUM WELLS | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | IMPURITY INCORPORATION | - |
dc.subject.keywordPlus | ELECTRONIC-STRUCTURES | - |
dc.subject.keywordPlus | OHMIC CONTACTS | - |
dc.subject.keywordPlus | PLANE | - |
dc.subject.keywordPlus | PHOTOLUMINESCENCE | - |
dc.subject.keywordPlus | POLARIZATION | - |
dc.subject.keywordPlus | IMPROVEMENT | - |
dc.subject.keywordPlus | SURFACES | - |
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