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Spin-filtering effect of thin Al2O3 barrier on tunneling magnetoresistance
- Authors
- Joo, Sungjung; Jung, K. Y.; Jun, K. I.; Kim, D. S.; Shin, K. H.; Hong, J. K.; Lee, B. C.; Rhie, K.
- Issue Date
- 14-4월-2014
- Publisher
- AMER INST PHYSICS
- Keywords
- spin filtering; Al2O3; tunneling magnetoresistance
- Citation
- APPLIED PHYSICS LETTERS, v.104, no.15
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 104
- Number
- 15
- ISSN
- 0003-6951
- Abstract
- Tunneling magnetoresistance (TMR) dependence on the Al2O3 barrier thickness was investigated for CoFe/Al2O3/CoFe magnetic tunnel junctions (MTJs). MTJs with very thin Al2O3 layers were grown by inserting an amorphous FeZr buffer layer whose role is only to reduce the roughness of bottom electrode. The TMR decreased as the thickness of the Al2O3 layer was reduced. The results are analyzed with the dependence of the spin-filtering effect on the Al2O3 thickness. It was found that a simple model of separating sp- and d-like electrons does not work, and it may suggest that the tunneling electrons are in rather hybridized state. (C) 2014 AIP Publishing LLC.
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Related Researcher
- Rhie, Kung won
- 과학기술대학 (디스플레이·반도체물리학부 반도체물리전공)