Graphene diffusion barrier for forming ohmic contact on N-polar n-type GaN for high-power vertical-geometry light-emitting diodes
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Dae-Hyun | - |
dc.contributor.author | Park, Jae-Seong | - |
dc.contributor.author | Seong, Tae-Yeon | - |
dc.date.accessioned | 2021-09-05T10:09:51Z | - |
dc.date.available | 2021-09-05T10:09:51Z | - |
dc.date.created | 2021-06-15 | - |
dc.date.issued | 2014-04 | - |
dc.identifier.issn | 1882-0778 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/98888 | - |
dc.description.abstract | Graphene sheets were employed as a diffusion barrier to form highly reliable ohmic contacts to N-polar n-GaN for high-power vertical-configuration LEDs (VLEDs). Before annealing, both Ti/Al and Ti/graphene/Al contacts exhibit ohmic behavior. After annealing at 250 degrees C, unlike the Ti/Al contact, the Ti/graphene/Al contacts remain ohmic with a contact resistivity of 7.5 x 10(-4) Omega cm(2) Secondary ion mass spectroscopy (SIMS) results show that the graphene sheets serve as a barrier to the outdiffusion of Ga atoms into the electrode. On the basis of SIMS and X-ray photoemission spectroscopy results, the ohmic and degradation behaviors of the Ti-based contacts are described and discussed. (C) 2014 The Japan Society of Applied Physics | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | TI/AL CONTACTS | - |
dc.subject | NATIVE DEFECTS | - |
dc.subject | SUBSTRATE | - |
dc.subject | MECHANISM | - |
dc.title | Graphene diffusion barrier for forming ohmic contact on N-polar n-type GaN for high-power vertical-geometry light-emitting diodes | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Seong, Tae-Yeon | - |
dc.identifier.doi | 10.7567/APEX.7.046501 | - |
dc.identifier.scopusid | 2-s2.0-84904624732 | - |
dc.identifier.wosid | 000336118100028 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS EXPRESS, v.7, no.4 | - |
dc.relation.isPartOf | APPLIED PHYSICS EXPRESS | - |
dc.citation.title | APPLIED PHYSICS EXPRESS | - |
dc.citation.volume | 7 | - |
dc.citation.number | 4 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | TI/AL CONTACTS | - |
dc.subject.keywordPlus | NATIVE DEFECTS | - |
dc.subject.keywordPlus | SUBSTRATE | - |
dc.subject.keywordPlus | MECHANISM | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
145 Anam-ro, Seongbuk-gu, Seoul, 02841, Korea+82-2-3290-2963
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.