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Unipolar resistive switching properties of amorphous Pr0.7Ca0.3MnO3 films grown on a Pt/Ti/SiO2/Si substrate

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dc.contributor.authorSeong, Tae-Geun-
dc.contributor.authorLee, Beom-Seok-
dc.contributor.authorChoi, Kyu Bum-
dc.contributor.authorKweon, Sang-Hyo-
dc.contributor.authorKim, Beom Yong-
dc.contributor.authorJung, Kyooho-
dc.contributor.authorMoon, Ji Won-
dc.contributor.authorLee, Kee Jeong-
dc.contributor.authorHong, Kwon-
dc.contributor.authorNahm, Sahn-
dc.date.accessioned2021-09-05T10:12:55Z-
dc.date.available2021-09-05T10:12:55Z-
dc.date.created2021-06-15-
dc.date.issued2014-04-
dc.identifier.issn1567-1739-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/98910-
dc.description.abstractAmorphous Pr0.7Ca0.3MnO3 (APCMO) films were grown on a Pt/Ti/SiO2/Si (Pt-Si) substrate at temperatures below 500 degrees C and the Pt/APCMO/Pt-Si device showed unipolar resistive switching behavior. Conduction behavior of the low resistance state (LRS) of the Pt/APCMO/Pt-Si device followed Ohm's law, and the resistance in LRS was independent of the size of the device, indicating that the conduction behavior in LRS can be explained by the presence of the conductive filaments. On the other hand, the resistance in the high resistance state (HRS) decreased with increasing the device size, and the conduction mechanism in the HRS was explained by Schottky emission. (C) 2014 Elsevier B. V. All rights reserved.-
dc.languageEnglish-
dc.language.isoen-
dc.publisherELSEVIER SCIENCE BV-
dc.subjectNONVOLATILE MEMORY-
dc.subjectRESISTANCE-
dc.titleUnipolar resistive switching properties of amorphous Pr0.7Ca0.3MnO3 films grown on a Pt/Ti/SiO2/Si substrate-
dc.typeArticle-
dc.contributor.affiliatedAuthorNahm, Sahn-
dc.identifier.doi10.1016/j.cap.2014.01.012-
dc.identifier.scopusid2-s2.0-84893941165-
dc.identifier.wosid000333977100002-
dc.identifier.bibliographicCitationCURRENT APPLIED PHYSICS, v.14, no.4, pp.538 - 542-
dc.relation.isPartOfCURRENT APPLIED PHYSICS-
dc.citation.titleCURRENT APPLIED PHYSICS-
dc.citation.volume14-
dc.citation.number4-
dc.citation.startPage538-
dc.citation.endPage542-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.identifier.kciidART001875176-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.description.journalRegisteredClasskci-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusNONVOLATILE MEMORY-
dc.subject.keywordPlusRESISTANCE-
dc.subject.keywordAuthorPCMO-
dc.subject.keywordAuthorReRAM-
dc.subject.keywordAuthorResistive switching-
dc.subject.keywordAuthorThin film-
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