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Prismatic punching defects in CdTe compounds

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dc.contributor.authorKim, K. H.-
dc.contributor.authorBolotnikov, A. E.-
dc.contributor.authorCamarda, G. S.-
dc.contributor.authorFranc, J.-
dc.contributor.authorFochuk, P.-
dc.contributor.authorJames, R. B.-
dc.date.accessioned2021-09-05T10:36:58Z-
dc.date.available2021-09-05T10:36:58Z-
dc.date.created2021-06-15-
dc.date.issued2014-03-15-
dc.identifier.issn0022-0248-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/99014-
dc.description.abstractThe origin and nature of star-shaped prismatic punching defects (PPDs) were analyzed by white-beam X-ray diffraction topography (WBXDT) and photoluminescence (PL) measurements. PPDs were observed in CdTe-based compounds that had Te-rich secondary phase defects and were annealed only under Cd overpressure. The evolutional features of the PPDs during annealing were similar to those of a diffusion process, that is, the in-diffusion of Cd vapor via Cd vacancies. PL mapping around the PPDs reveals that the stoichiometry of PPDs is the same as that of a normal matrix, and that PPDs are just structural defects with non-radiative emission induced by the exothermic reaction between Cd and Te. We find that Te-rich secondary phase defects can be removed without the generation of star-shaped PPDs, if the exothermic reaction rate can be slowed down to reduce the thermal gradient between the Te-rich region and the surrounding matrix. (C) 2013 Elsevier B.V. All rights reserved-
dc.languageEnglish-
dc.language.isoen-
dc.publisherELSEVIER SCIENCE BV-
dc.subjectCDZNTE-
dc.subjectDETECTORS-
dc.titlePrismatic punching defects in CdTe compounds-
dc.typeArticle-
dc.contributor.affiliatedAuthorKim, K. H.-
dc.identifier.doi10.1016/j.jcrysgro.2013.12.015-
dc.identifier.scopusid2-s2.0-84891723347-
dc.identifier.wosid000335770000001-
dc.identifier.bibliographicCitationJOURNAL OF CRYSTAL GROWTH, v.390, pp.1 - 4-
dc.relation.isPartOfJOURNAL OF CRYSTAL GROWTH-
dc.citation.titleJOURNAL OF CRYSTAL GROWTH-
dc.citation.volume390-
dc.citation.startPage1-
dc.citation.endPage4-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaCrystallography-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryCrystallography-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusCDZNTE-
dc.subject.keywordPlusDETECTORS-
dc.subject.keywordAuthorDefects-
dc.subject.keywordAuthorBridgman technique-
dc.subject.keywordAuthorCadmium compounds-
dc.subject.keywordAuthorSemiconducting II-VI materials-
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