Prismatic punching defects in CdTe compounds
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, K. H. | - |
dc.contributor.author | Bolotnikov, A. E. | - |
dc.contributor.author | Camarda, G. S. | - |
dc.contributor.author | Franc, J. | - |
dc.contributor.author | Fochuk, P. | - |
dc.contributor.author | James, R. B. | - |
dc.date.accessioned | 2021-09-05T10:36:58Z | - |
dc.date.available | 2021-09-05T10:36:58Z | - |
dc.date.created | 2021-06-15 | - |
dc.date.issued | 2014-03-15 | - |
dc.identifier.issn | 0022-0248 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/99014 | - |
dc.description.abstract | The origin and nature of star-shaped prismatic punching defects (PPDs) were analyzed by white-beam X-ray diffraction topography (WBXDT) and photoluminescence (PL) measurements. PPDs were observed in CdTe-based compounds that had Te-rich secondary phase defects and were annealed only under Cd overpressure. The evolutional features of the PPDs during annealing were similar to those of a diffusion process, that is, the in-diffusion of Cd vapor via Cd vacancies. PL mapping around the PPDs reveals that the stoichiometry of PPDs is the same as that of a normal matrix, and that PPDs are just structural defects with non-radiative emission induced by the exothermic reaction between Cd and Te. We find that Te-rich secondary phase defects can be removed without the generation of star-shaped PPDs, if the exothermic reaction rate can be slowed down to reduce the thermal gradient between the Te-rich region and the surrounding matrix. (C) 2013 Elsevier B.V. All rights reserved | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | CDZNTE | - |
dc.subject | DETECTORS | - |
dc.title | Prismatic punching defects in CdTe compounds | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, K. H. | - |
dc.identifier.doi | 10.1016/j.jcrysgro.2013.12.015 | - |
dc.identifier.scopusid | 2-s2.0-84891723347 | - |
dc.identifier.wosid | 000335770000001 | - |
dc.identifier.bibliographicCitation | JOURNAL OF CRYSTAL GROWTH, v.390, pp.1 - 4 | - |
dc.relation.isPartOf | JOURNAL OF CRYSTAL GROWTH | - |
dc.citation.title | JOURNAL OF CRYSTAL GROWTH | - |
dc.citation.volume | 390 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 4 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Crystallography | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Crystallography | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | CDZNTE | - |
dc.subject.keywordPlus | DETECTORS | - |
dc.subject.keywordAuthor | Defects | - |
dc.subject.keywordAuthor | Bridgman technique | - |
dc.subject.keywordAuthor | Cadmium compounds | - |
dc.subject.keywordAuthor | Semiconducting II-VI materials | - |
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