Effect of heating on electrical transport in AlGaN/GaN Schottky barrier diodes on Si substrate
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Woo, Hyeonseok | - |
dc.contributor.author | Jo, Yongcheol | - |
dc.contributor.author | Kim, Jongmin | - |
dc.contributor.author | Roh, Cheonghyun | - |
dc.contributor.author | Lee, Junho | - |
dc.contributor.author | Kim, H. | - |
dc.contributor.author | Im, H. | - |
dc.contributor.author | Hahn, Cheol-koo | - |
dc.contributor.author | Park, Jungho | - |
dc.date.accessioned | 2021-09-05T10:51:28Z | - |
dc.date.available | 2021-09-05T10:51:28Z | - |
dc.date.created | 2021-06-15 | - |
dc.date.issued | 2014-03 | - |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/99107 | - |
dc.description.abstract | Thermal properties of the AlGaN/GaN Schottky barrier diodes were investigated, using a pulsed-IV measurement technique. The thermally degraded mobility in the DC-bias configuration was restored, when the pulse-bias voltages were applied. It was observed that heat generation was minimized, using a pulse width of 500 ns and pulse period of 10 ms. For the SBDs consisting of 5 mu m of anode-cathode distance, on-resistance measured by the pulse-IV and DC-IV were 1.6 and 6.2 Omega-mm, respectively. We also demonstrated the device-width dependence of the thermal properties of the SBDs. We found that the performance of the power devices can be greatly influenced by the heat generation. (C) 2013 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | THERMAL MANAGEMENT | - |
dc.subject | RELIABILITY | - |
dc.subject | TRANSISTORS | - |
dc.subject | BEHAVIOR | - |
dc.title | Effect of heating on electrical transport in AlGaN/GaN Schottky barrier diodes on Si substrate | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jungho | - |
dc.identifier.doi | 10.1016/j.cap.2013.11.015 | - |
dc.identifier.scopusid | 2-s2.0-84899458764 | - |
dc.identifier.wosid | 000335804900021 | - |
dc.identifier.bibliographicCitation | CURRENT APPLIED PHYSICS, v.14, pp.S98 - S102 | - |
dc.relation.isPartOf | CURRENT APPLIED PHYSICS | - |
dc.citation.title | CURRENT APPLIED PHYSICS | - |
dc.citation.volume | 14 | - |
dc.citation.startPage | S98 | - |
dc.citation.endPage | S102 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | THERMAL MANAGEMENT | - |
dc.subject.keywordPlus | RELIABILITY | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | BEHAVIOR | - |
dc.subject.keywordAuthor | AlGaN/GaN Schottky barrier diode | - |
dc.subject.keywordAuthor | Self-heating effect | - |
dc.subject.keywordAuthor | Pulse mode measurement | - |
dc.subject.keywordAuthor | Mobility degradation | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(02841) 서울특별시 성북구 안암로 14502-3290-1114
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.