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300 GHz InP HBT amplifier with 10 mW output power

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dc.contributor.authorYu, H. G.-
dc.contributor.authorChoi, S. H.-
dc.contributor.authorJeon, S.-
dc.contributor.authorKim, M.-
dc.date.accessioned2021-09-05T11:18:07Z-
dc.date.available2021-09-05T11:18:07Z-
dc.date.created2021-06-15-
dc.date.issued2014-02-27-
dc.identifier.issn0013-5194-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/99259-
dc.description.abstractA high-power terahertz solid-state amplifier fabricated using 0.25 mu m InP heterojunction bipolar transistor (HBT) technology is reported. This amplifier utilies a novel defective-ground four-way balun to combine differential amplifier chains for a total output device periphery of 40 mu m. A significant amount of power of similar to 10 mW is obtained at 305 GHz with better than 20 dB small-signal gain.-
dc.languageEnglish-
dc.language.isoen-
dc.publisherINST ENGINEERING TECHNOLOGY-IET-
dc.title300 GHz InP HBT amplifier with 10 mW output power-
dc.typeArticle-
dc.contributor.affiliatedAuthorJeon, S.-
dc.contributor.affiliatedAuthorKim, M.-
dc.identifier.doi10.1049/el.2013.3288-
dc.identifier.scopusid2-s2.0-84896906637-
dc.identifier.wosid000333395500029-
dc.identifier.bibliographicCitationELECTRONICS LETTERS, v.50, no.5, pp.377 - 378-
dc.relation.isPartOfELECTRONICS LETTERS-
dc.citation.titleELECTRONICS LETTERS-
dc.citation.volume50-
dc.citation.number5-
dc.citation.startPage377-
dc.citation.endPage378-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
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