Cocktails of Paste Coatings for Performance Enhancement of CuInGaS2 Thin-Film Solar Cells
- Authors
- An, Hee Sang; Cho, Yunae; Park, Se Jin; Jeon, Hyo Sang; Hwang, Yun Jeong; Kim, Dong-Wook; Min, Byoung Koun
- Issue Date
- 22-1월-2014
- Publisher
- AMER CHEMICAL SOC
- Keywords
- chalcopyrite; solar cells; solution process; sulfurization; paste coating
- Citation
- ACS APPLIED MATERIALS & INTERFACES, v.6, no.2, pp.888 - 893
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACS APPLIED MATERIALS & INTERFACES
- Volume
- 6
- Number
- 2
- Start Page
- 888
- End Page
- 893
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/99515
- DOI
- 10.1021/am404164b
- ISSN
- 1944-8244
- Abstract
- To fabricate low-cost and printable wide-bandgap CuInxGa1-xS2 (CIGS) thin-film solar cells, a method based on a precursor solution was developed. In particular, under this method, multiple coatings with two pastes with different properties (e.g., viscosity) because of the different binder materials added were applied. Paste A could form a thin, dense layer enabling a high-efficiency solar cell but required several coating and drying cycles for the desired film thickness. On the other hand, paste B could easily form one-micrometer-thick films by means of a one-time spin-coating process but the porous microstructure limited the solar cell performance. Three different configurations of the CIGS films (A + B, B + A, and A + B + A) were realized by multiple coatings with the two pastes to find the optimal stacking configuration for a combination of the advantages of each paste. Solar cell devices using these films showed a notable difference in their photovoltaic characteristics. The bottom dense layer increased the minority carrier diffusion length and enhanced the short-circuit current. The top dense layer could suppress interface recombination but exhibited a low optical absorption, thereby decreasing the photocurrent. As a result, the A + B configuration could be suggested as a desirable simple stacking structure. The solar. cell with A + B coating showed a highly improved efficiency (4.66%) compared to the cell with a film prepared by paste B only (2.90%), achieved by simple insertion of a single thin (200 nm), dense layer between the Mo back contact and a thick porous CIGS layer.
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