Thickness dependent low-frequency noise characteristics of a-InZnO thin-film transistors under light illumination
DC Field | Value | Language |
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dc.contributor.author | Choi, Hyun-Sik | - |
dc.contributor.author | Jeon, Sanghun | - |
dc.date.accessioned | 2021-09-05T12:22:07Z | - |
dc.date.available | 2021-09-05T12:22:07Z | - |
dc.date.created | 2021-06-15 | - |
dc.date.issued | 2014-01-13 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/99544 | - |
dc.description.abstract | The influence of illumination on the electrical characteristics of amorphous indium-zinc oxide (a-IZO) thin-film transistors (TFTs) has been investigated. The electrical properties are found to depend significantly on the active thickness (TIZO) of the a-IZO TFT. The active thickness is seen to play a major role in the carrier transport mechanism. Based on the carrier fluctuation model, the low-frequency noise (LFN) characteristics of a-IZO devices of varying thicknesses were evaluated before as well as after illumination. Similar to the results of DC and capacitance-voltage (C-V) measurements, the LFN characteristics too show that the light-induced carrier transport becomes significantly enhanced for relatively thick (T-IZO >= 60 nm) a-IZO devices. (C) 2014 AIP Publishing LLC. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | HIGH-K GATE | - |
dc.subject | SUBMICROMETER MOSFETS | - |
dc.subject | DIELECTRICS | - |
dc.subject | DRAIN | - |
dc.subject | OXIDE | - |
dc.title | Thickness dependent low-frequency noise characteristics of a-InZnO thin-film transistors under light illumination | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeon, Sanghun | - |
dc.identifier.doi | 10.1063/1.4862318 | - |
dc.identifier.scopusid | 2-s2.0-84893125516 | - |
dc.identifier.wosid | 000330431000117 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.104, no.2 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 104 | - |
dc.citation.number | 2 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | HIGH-K GATE | - |
dc.subject.keywordPlus | SUBMICROMETER MOSFETS | - |
dc.subject.keywordPlus | DIELECTRICS | - |
dc.subject.keywordPlus | DRAIN | - |
dc.subject.keywordPlus | OXIDE | - |
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