Electrical properties of CIGS/Mo junctions as a function of MoSe2 orientation and Na doping
- Authors
- Yoon, Ju-Heon; Kim, Jun-Ho; Kim, Won Mok; Park, Jong-Keuk; Baik, Young-Joon; Seong, Tae-Yeon; Jeong, Jeung-hyun
- Issue Date
- 1월-2014
- Publisher
- WILEY
- Keywords
- CIGS thin-film solar cells; MoSe2 orientation; Na doping; CIGS; Mo contact resistance; inverse transmission line method
- Citation
- PROGRESS IN PHOTOVOLTAICS, v.22, no.1, pp.90 - 96
- Indexed
- SCIE
SCOPUS
- Journal Title
- PROGRESS IN PHOTOVOLTAICS
- Volume
- 22
- Number
- 1
- Start Page
- 90
- End Page
- 96
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/99647
- DOI
- 10.1002/pip.2377
- ISSN
- 1062-7995
- Abstract
- The electrical properties of Cu(In,Ga)Se-2/Mo junctions were characterized with respect of MoSe2 orientation and Na doping level using an inverse transmission line method, in which the Cu(In,Ga)Se-2 (CIGS)/Mo contact resistance could be measured separately from the CIGS film sheet resistance. The MoSe2 orientation was controlled by varying the Mo surface density, with the c-axis parallel and normal orientations favored on Mo surfaces of lower and higher density, respectively. The effect of Na doping was compared by using samples with and without a SiOx film on sodalime glass. The conversion of the MoSe2 orientation from c-axis normal to parallel produced a twofold reduction in CIGS/Mo contact resistance. Measurements of the contact resistances as a function of temperature showed that the difference in CIGS/Mo contact resistance between the samples with different MoSe2 orientations was due to different barrier heights at the back contact. Comparison between Na-doped and Na-reduced samples revealed that the contact resistance for the Na-reduced system was four times of that of the doped sample, which showed more pronounced Schottky-junction behavior at lower temperature, indicating that Na doping effectively reduced the barrier height at the back contact. Copyright (c) 2013 John Wiley & Sons, Ltd.
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