Solution processed high band-gap CuInGaS2 thin film for solar cell applications
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Se Jin | - |
dc.contributor.author | Cho, Jin Woo | - |
dc.contributor.author | Lee, Joong Kee | - |
dc.contributor.author | Shin, Keeshik | - |
dc.contributor.author | Kim, Ji-Hyun | - |
dc.contributor.author | Min, Byoung Koun | - |
dc.date.accessioned | 2021-09-05T12:42:17Z | - |
dc.date.available | 2021-09-05T12:42:17Z | - |
dc.date.created | 2021-06-15 | - |
dc.date.issued | 2014-01 | - |
dc.identifier.issn | 1062-7995 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/99664 | - |
dc.description.abstract | A high band-gap (similar to 1.55eV) chalcopyrite compound film (CuInGaS2) was synthesized by a precursor solution-based coating method with an oxidation and a sulfurization heat treatment process. The film revealed two distinct morphologies: a densely packed bulk layer and a rough surface layer. We found that the rough surface is attributed to the formation of Ga deficient CuInGaS2 crystallites. Because of the high band-gap optical property of the CuInGaS2 absorber film, a solar cell device with this film showed a relatively high open circuit voltage (similar to 787mV) with a power conversion efficiency of 8.28% under standard irradiation conditions. Copyright (c) 2013 John Wiley & Sons, Ltd. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | WILEY | - |
dc.subject | LOW-COST | - |
dc.title | Solution processed high band-gap CuInGaS2 thin film for solar cell applications | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Ji-Hyun | - |
dc.contributor.affiliatedAuthor | Min, Byoung Koun | - |
dc.identifier.doi | 10.1002/pip.2354 | - |
dc.identifier.scopusid | 2-s2.0-84890548303 | - |
dc.identifier.wosid | 000328248500016 | - |
dc.identifier.bibliographicCitation | PROGRESS IN PHOTOVOLTAICS, v.22, no.1, pp.122 - 128 | - |
dc.relation.isPartOf | PROGRESS IN PHOTOVOLTAICS | - |
dc.citation.title | PROGRESS IN PHOTOVOLTAICS | - |
dc.citation.volume | 22 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 122 | - |
dc.citation.endPage | 128 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Energy & Fuels | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Energy & Fuels | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | LOW-COST | - |
dc.subject.keywordAuthor | high band-gap | - |
dc.subject.keywordAuthor | CIGS | - |
dc.subject.keywordAuthor | CuInxGa1-xS2 | - |
dc.subject.keywordAuthor | solution process | - |
dc.subject.keywordAuthor | solar cells | - |
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