Use of a precursor solution to fill the gaps between indium tin oxide nanorods, for preparation of three-dimensional CuInGaS2 thin-film solar cells
- Authors
- Chu, Van Ben; Cho, Jin Woo; Park, Se Jin; Park, Hoo Keun; Do, Young Rag; Min, Byoung Koun
- Issue Date
- 1월-2014
- Publisher
- SPRINGER
- Keywords
- Gap filling; ITO nanorods; CIGS; Superstrate-type; Solar cells
- Citation
- RESEARCH ON CHEMICAL INTERMEDIATES, v.40, no.1, pp.49 - 56
- Indexed
- SCIE
SCOPUS
- Journal Title
- RESEARCH ON CHEMICAL INTERMEDIATES
- Volume
- 40
- Number
- 1
- Start Page
- 49
- End Page
- 56
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/99700
- DOI
- 10.1007/s11164-013-1454-z
- ISSN
- 0922-6168
- Abstract
- We have fabricated a three-dimensional (3D) nanostructured indium tin oxide (ITO) film in which the spaces were filled by use of a Cu, In, and Ga precursor solution. This solution has potential for use in bulk heterojunction CuInxGa1-xS2 (CIGS) thin-film solar cells. ITO nanorod films similar to 700 nm thick on glass substrates were synthesized by radio-frequency magnetron sputtering deposition. To ensure complete filling of the gaps in ITO nanorod films, a polymeric binder-free precursor solution was used. In addition, a two-step heating process (oxidation and sulfurization) was used after coating of the precursor solution to make a CIGS absorber film with a minimum of carbon impurities. Superstrate-type solar cell devices with 3D nanostructured films (CIGS-ITO) had a photovoltaic efficiency of 1.11 % despite the absence of a buffer layer (e. g. CdS) between the CIGS and ITO.
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