Unified Analytic Model for Current-Voltage Behavior in Amorphous Oxide Semiconductor TFTs
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Sungsik | - |
dc.contributor.author | Striakhilev, Denis | - |
dc.contributor.author | Jeon, Sanghun | - |
dc.contributor.author | Nathan, Arokia | - |
dc.date.accessioned | 2021-09-05T12:55:24Z | - |
dc.date.available | 2021-09-05T12:55:24Z | - |
dc.date.created | 2021-06-15 | - |
dc.date.issued | 2014-01 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/99729 | - |
dc.description.abstract | We present a simple and semi-physical analytical description of the current-voltage characteristics of amorphous oxide semiconductor thin-film transistors in the above-threshold and sub-threshold regions. Both regions are described by single unified expression that employs the same set of model parameter values directly extracted from measured terminal characteristics. The model accurately reproduces measured characteristics of amorphous semiconductor thin film transistors in general, yielding a scatter of <4%. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | THIN-FILM TRANSISTORS | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | SILICON | - |
dc.subject | EXTRACTION | - |
dc.title | Unified Analytic Model for Current-Voltage Behavior in Amorphous Oxide Semiconductor TFTs | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeon, Sanghun | - |
dc.identifier.doi | 10.1109/LED.2013.2290532 | - |
dc.identifier.scopusid | 2-s2.0-84891557429 | - |
dc.identifier.wosid | 000329061300028 | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.35, no.1, pp.84 - 86 | - |
dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 35 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 84 | - |
dc.citation.endPage | 86 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | EXTRACTION | - |
dc.subject.keywordAuthor | Amorphous semiconductor | - |
dc.subject.keywordAuthor | thin film transistors (TFTs) | - |
dc.subject.keywordAuthor | compact model | - |
dc.subject.keywordAuthor | sub-threshold | - |
dc.subject.keywordAuthor | above-threshold | - |
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