Effect of chemical etching on magnetic anisotropy of ferromagnetic GaMnAs films studied by planar Hall effect

Yea, Sun-youn; Chung, S. J.; Son, Hyunji; Shin, D. Y.; Lee, Sanghoon; Liu, X.; Furdyna, J. K.

doi:10.1016/j.ssc.2008.05.037

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Effect of chemical etching on magnetic anisotropy of ferromagnetic GaMnAs films studied by planar Hall effect

Yea, Sun-youn;
Chung, S. J.;
Son, Hyunji;
Shin, D. Y.;
Lee, Sanghoon;
외 2명

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5

초록

We have investigated the effect of chemical etching on magnetic anisotropy of ferromagnetic GaMnAs film using the planar Hall effect (PHE). Different thicknesses were obtained on a single GaMnAs specimen by using different etching times on selected areas, and the PHE was then measured using the Hall bar configurations patterned on the area. Cubic and uniaxial anisotropy fields were obtained for the films by fitting the angular dependence of the PHE data to the Stoner-Wohlfarth rnodel. The results exhibited a very systematic dependence on the etched thickness, demonstrating that the chemical etching process significantly affects the magnetic anisotropy of ferromagnetic GaMnAs films. (C) 2008 Elsevier Ltd. All rights reserved.

키워드

semiconductor; ferromagentism; anisotropy; planar; Hall effect; HOLE CONCENTRATION; TEMPERATURE; EPITAXY

제목: Effect of chemical etching on magnetic anisotropy of ferromagnetic GaMnAs films studied by planar Hall effect

저자: Yea, Sun-youn; Chung, S. J.; Son, Hyunji; Shin, D. Y.; Lee, Sanghoon; Liu, X.; Furdyna, J. K.

DOI: 10.1016/j.ssc.2008.05.037

발행일: 2008-08

유형: Article

저널명: Solid State Communications

권: 147

호: 7-8

페이지: 309 ~ 312