Engineering electronic properties of graphene by coupling with Si-Rich, two-dimensional Islands

Lee, D.H.; Yi, J.; Lee, J.M.; Lee, S.J.; Doh, Y.-J.; Jeong, H.Y.; Lee, Z.; Paik, U.; Rogers, J.A.; Park, W.I.

doi:10.1021/nn304007x

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Engineering electronic properties of graphene by coupling with Si-Rich, two-dimensional Islands

Lee, D.H.;
Yi, J.;
Lee, J.M.;
Lee, S.J.;
Doh, Y.-J.;
외 5명

Citations

SCOPUS

34

초록

Recent theoretical and experimental studies demonstrated that breaking of the sublattice symmetry in graphene produces an energy gap at the former Dirac point. We describe the synthesis of graphene sheets decorated with ultrathin, Si-rich two-dimensional (2D) islands (i.e., Gr:Si sheets), in which the electronic property of graphene is modulated by coupling with the Si-islands. Analyses based on transmission electron microscopy, atomic force microscopy, and electron and optical spectroscopies confirmed that Si-islands with thicknesses of ∼2 to 4 nm and a lateral size of several tens of nm were bonded to graphene via van der Waals interactions. Field-effect transistors (FETs) based on Gr:Si sheets exhibited enhanced transconductance and maximum-to-minimum current level compared to bare-graphene FETs, and their magnitudes gradually increased with increasing coverage of Si layers on the graphene. The temperature dependent current-voltage measurements of the Gr:Si sheet showed approximately a 2-fold increase in the resistance by decreasing the temperature from 250 to 10 K, which confirmed the opening of the substantial bandgap (∼2.5-3.2 meV) in graphene by coupling with Si islands. © 2012 American Chemical Society.

키워드

bandgap engineering; graphene; silicon islands; sublattice asymmetry; van der Waals growth; Band gap engineering; Current levels; Current-voltage measurements; Dirac point; Enhanced transconductance; Experimental studies; Graphene sheets; Lateral sizes; Optical spectroscopy; Si layer; Silicon islands; Sub-lattices; Sublattice symmetry; Temperature dependent; Two-dimensional (2D) islands; Ultra-thin; Van der waals; Van Der Waals interactions; Atomic force microscopy; Electronic properties; Energy gap; Field effect transistors; Silicon; Transmission electron microscopy; Two dimensional; Van der Waals forces; Graphene; graphite; nanomaterial; silicon; article; chemistry; electric conductivity; equipment design; equipment failure; particle size; semiconductor; ultrastructure; Electric Conductivity; Equipment Design; Equipment Failure Analysis; Graphite; Nanostructures; Particle Size; Silicon; Transistors, Electronic

제목: Engineering electronic properties of graphene by coupling with Si-Rich, two-dimensional Islands

저자: Lee, D.H.; Yi, J.; Lee, J.M.; Lee, S.J.; Doh, Y.-J.; Jeong, H.Y.; Lee, Z.; Paik, U.; Rogers, J.A.; Park, W.I.

DOI: 10.1021/nn304007x

발행일: 2013

유형: Article

저널명: ACS Nano

권: 7

호: 1

페이지: 301 ~ 307