Effect of Sb doping on the opto-electronic properties of SnO2 nanowires

Kim, Yoon Chul; Yoon, Chang Hoon; Park, Jaehyun; Yoon, Jangyeol; Han, Noh Soo; Song, Jae Kyu; Park, Seung Min; Ha, Jeong Sook

doi:10.1016/j.tsf.2012.07.001

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Effect of Sb doping on the opto-electronic properties of SnO2 nanowires

Kim, Yoon Chul;
Yoon, Chang Hoon;
Park, Jaehyun;
Yoon, Jangyeol;
Han, Noh Soo;
... Ha, Jeong Sook;
외 2명

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초록

Antimony (Sb) doping of SnO2 nanowires (NWs) was investigated for its optical and electrical effects. The low-temperature photoluminescence spectra of SnO2 NWs varied significantly with increasing Sb content, where the temperature-dependence of the visible emission at ca. 400 nm was distinctive with Sb-doping, indicating different defect states, such as neutral and positively charged oxygen vacancies. Field effect transistors (FETs) with low-level Sb-doped SnO2 NW channels exhibited higher mobility, charge concentration, and faster response and recovery to UV light than intrinsic SnO2 NW FETs. (C) 2012 Elsevier B.V. All rights reserved.

키워드

Tin oxide nanowires; Antimony doping; Photoluminescence; Field effect mobility; Defect state; UV sensing; PHOTOLUMINESCENCE PROPERTIES; GROWTH

제목: Effect of Sb doping on the opto-electronic properties of SnO2 nanowires

저자: Kim, Yoon Chul; Yoon, Chang Hoon; Park, Jaehyun; Yoon, Jangyeol; Han, Noh Soo; Song, Jae Kyu; Park, Seung Min; Ha, Jeong Sook

DOI: 10.1016/j.tsf.2012.07.001

발행일: 2012-08-31

유형: Article

저널명: Thin Solid Films

권: 520

호: 21

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