상세 보기
초록
GaN-based semiconductors are of great technological importance for the fabrication of optoelectronic devices, such as light-emitting diodes (LEDs) and laser diodes. The further improvement of LED performance can be achieved through the enhancement of external quantum efficiency. In this regard, high-quality p-type ohmic electrodes having low contact resistance and high transmittance (or reflectivity), along with thermal stability, must be developed because p-type ohmic contacts play a key role in the performance of LEDs. In this paper, we review recent advances in p-type ohmic-contact technology for GaN-based LEDs. A variety of methods for forming transparent and reflective ohmic contacts are introduced.
키워드
Gallium nitride; light-emitting diodes (LEDs); transparent and reflective ohmic contacts; LOW-OPERATION VOLTAGE; VERTICAL CURRENT INJECTION; SPS TUNNELING CONTACT; NITRIDE-BASED LEDS; LASER LIFT-OFF; MG-DOPED GAN; LOW-RESISTANCE; ELECTRICAL-PROPERTIES; SURFACE-TREATMENT; HIGH-REFLECTANCE
- 제목
- Ohmic-Contact Technology for GaN-Based Light-Emitting Diodes: Role of P-Type Contact
- 저자
- Song, June O.; Ha, Jun-Seok; Seong, Tae-Yeon
- 발행일
- 2010-01
- 유형
- Review
- 권
- 57
- 호
- 1
- 페이지
- 42 ~ 59