Photocurrent Characteristics of HgTe Nanoparticle Films-Si Nanowires Heterojunctions Made Using a Simple Transfer-Dropping Method

초록

In this study, pn heterojunction diodes are constructed with p-type HgTe nanoparticle (NP) films dropped by a nanoplotter and n-type Si nanowires (NWs) transferred onto plastic substrates and their optoelectronic characteristics are investigated under the illumination of 633-nm wavelength light. The rectification ratio when light is irradiated on the diode is twice that in the dark. The photocurrent efficiency of the diode at a bias voltage of 2.5 V is determined to be 0.41 mu A/W, which is greater than that of the transferred Si NWs.

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