Electrical Transport Properties of Lambda Deoxyribonucleic Acid Films

초록

We have fabricated and characterized lambda deoxyribonucleic acid (DNA) field-effect transistor (FET) devices. Lambda DNA films were spin-coated between the source/drain metal electrodes, and the thickness was approximately 100 nm. The gate modulation of the FET devices exhibited nonlinear I-sd-V-sd, low I-sd depletion, and a small V-g dependence. The nonlinearity was mostly due to the contact potential between the DNA and the metal electrodes. The weak hole transport behavior of the lambda DNA was attributed to the most conductive guanine bases from the good mixture of adenine, thymine, guanine, and cytosine bases. Our results suggest that the lambda DNA films may have semiconducting characteristics.

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