상세 보기
Resistive-switching behavior in Ti/Si3N4/Ti memory structures for ReRAM applications
- Kim, Hee-Dong;
- An, Ho-Myoung;
- Kim, Tae Geun
Citations
WEB OF SCIENCE
23초록
In this paper, the resistive-switching behavior of Si3N4 films using nitride-related traps in Ti/Si3N4/Ti memory cells is reported. Bipolar resistive switching behavior was clearly observed at a low voltage of about +/- 2.5 V. Compared to Au/Si3N4/Ti memory cells, the set and reset current of Ti/Si3N4/Ti memory cells was decreased from 5 mu A and 1.5 mA to 40 nA and 1 mu A, respectively, at V-read = 0.1 V. In addition, Ti/Si3N4/Ti memory cells showed improved endurance characteristics over 2.7 x 10(3) cycles. (C) 2012 Elsevier B.V. All rights reserved.
키워드
Resistive switching memory; Si3N4; Space charge limited current
- 제목
- Resistive-switching behavior in Ti/Si3N4/Ti memory structures for ReRAM applications
- 저자
- Kim, Hee-Dong; An, Ho-Myoung; Kim, Tae Geun
- 발행일
- 2012-10
- 유형
- Article
- 권
- 98
- 페이지
- 351 ~ 354