Enhancement of light output power of GaN-based vertical light emitting diodes by optimizing n-GaN thickness

초록

The light output and electrical characteristics of GaN-based vertical light emitting diodes were investigated as a function of n-GaN thickness. The forward voltage increases from 3.34 to 3.42 V at an injection current of 350 mA as the n-GaN thickness decreases from 5.0 to 2.0 mu m. Even at a high injection current of 2.0 A, LEDs with 2.0 mu m-thick n-GaN reveal stable forward characteristics which are comparable to those of LEDs with 5.0 mu m-thick n-GaN. All the samples exhibit almost the same reverse current up to approximately 8 V. The output power increases with decreasing n-GaN layer thickness. For example, LEDs with 2.0 mu m-thick n-GaN yield about 12% higher light output power as compared to LEDs with 5.0 mu m-thick n-GaN. Their light output power continuously increases without saturation as the injection current increases up to 1 A. The n-GaN thickness dependence of the electrical characteristics is described and discussed. (C) 2011 Elsevier B.V. All rights reserved.

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