Electrical properties of phosphorus-doped polycrystalline germanium formed by solid-phase and metal-induced crystallization

초록

Electrical properties of poly-Ge films achieved by SPC and MIC methods were investigated through XRD and Hall-effect measurements. In particular, dependency of carrier concentration and mobility on phosphorus (P) and its relationship with Ge vacancy defects working as p-type dopants are studied in poly-Ge samples with varying P implant dose. The existence of P atoms in alpha-Ge affects the grain size of crystallized poly-Ge films, subsequently changing their carrier concentration and mobility. High dose of P atoms in SPC and MIC poly-Ge samples successfully converts the type of poly-Ge from p (hole) to n (electron). As a result, n-type carrier concentrations of similar to 10(17) in SPC and similar to 10(16) in MIC poly-Ge film (highly doped) are obtained, respectively demonstrating highest mobility of similar to 35 cm(2)/V s and similar to 30 cm(2)/V s at 500 degrees C and 400 degrees C. (C) 2013 Elsevier B.V. All rights reserved.

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