An alternate switching/non-switching behavior of a nanostructured magnetic thin film under sub-Stoner-Wohlfarth switching fields

  • Lee, Jong Min
  • Lim, S. H.
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초록

Dynamic magnetization switching can occur under sub-Stoner-Wohlfarth switching fields, and the switching behavior is well described by the switching phase diagram, showing the regions of non-switching, coherent, and incoherent switching. However, in the incoherent switching region, an alternate switching/non-switching behavior is observed under a strong bias field in the transverse direction, invalidating the usual switching phase diagram. This abnormal switching behavior is explained by a damped oscillation motion of the magnetization, which is restricted by the energy well at a given condition. (C) 2011 American Institute of Physics. [doi:10.1063/1.3658266]

키워드

TUNNEL-JUNCTIONSPARTICLE
제목
An alternate switching/non-switching behavior of a nanostructured magnetic thin film under sub-Stoner-Wohlfarth switching fields
저자
Lee, Jong MinLim, S. H.
DOI
10.1063/1.3658266
발행일
2011-11-01
유형
Article
저널명
Journal of Applied Physics
110
9