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초록
InGaN/GaN multiquantum well light-emitting diodes (LED) with emission wavelength of 450 nm were irradiated with average energy of 9.8 MeV and dose of 5.5x10(11) cm(-2) neutrons. Right after irradiation, the forward current of the irradiated LEDs was decreased as a result of the creation of deep levels by the neutron-induced lattice displacement. However, unstable lattice damages resulting from the collisions with the incoming neutrons were removed at room temperature 6 days after the irradiation. The diode turn-on voltage, ideality factor, and optical emission intensity were recovered to preirradiated state by self-annealing process at room temperature.
키워드
annealing; deep levels; gallium compounds; III-V semiconductors; indium compounds; light emitting diodes; neutron effects; quantum well devices; wide band gap semiconductors; GALLIUM NITRIDE; PROTON IRRADIATION; GAN; DAMAGE; TEMPERATURE; GAAS
- 제목
- Effect of neutron irradiation on electrical and optical properties of InGaN/GaN light-emitting diodes
- 저자
- Kim, Hong-Yeol; Kim, Jihyun; Ren, F.; Jang, Soohwan
- 발행일
- 2010-01
- 유형
- Article
- 권
- 28
- 호
- 1
- 페이지
- 27 ~ 29