Buried interface management for FAPbI3-based perovskite solar cells via multifunctional benzothiadiazole derivatives

초록

Attaining high efficiency in perovskite solar cells (PSCs) often necessitates effective interfacial passivation, which poses challenges, especially concerning the buried interface due to the dissolution of passivation agents during perovskite deposition. In this work, we report a multifunctional modification strategy by introducing the variations of benzothiadiazole (BTD) derivatives to function as interface-modified layers in PSCs. This buried interface modification mitigates oxygen vacancies on the SnO2 surface and fine-tunes the energy level of the electron transport layer, resulting in an improved alignment with the FAPbI3 layer. Furthermore, the introduced BTD derivatives led to the improved crystallinity of FAPbI3 films as well as suppressed the non-radiative recombination losses through passivating the interfacial defects. Consequently, a device with modified SnO2 exhibited an enhanced power conversion efficiency (PCE) of 25.04% along with an improved long-term device stability.

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