Microstructure and Resistive Switching Behavior of Amorphous Pr0.7Ca0.3MnO3 Films Grown under Various Oxygen Pressures

  • Choi, Kyu Bum
  • Lee, Beom-Seok
  • Joung, Mi-Ri
  • Yoo, Jong Hee
  • Kim, Won
  • 외 1명
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초록

Amorphous Pr0.7Ca0.3MnO3(APCMO) films grown on a Pt electrode under an oxygen pressure(OP) of 5 mTorr showed a dense microstructure with a smooth surface but bipolar switching behavior was not observed in this film. Porosity and surface roughness increased with increasing OP and a typical bipolar switching behavior was observed in the APCMO films grown under 100 and 200 mTorr OP. The resistance of these APCMO films decreased with increasing device area in both low- and high-resistance states. Space-charge-limited current and Schottky emission were used to explain the leakage current mechanism of the Ti/APCMO/Pt device in low- and high-resistance states, respectively. (C) 2013 The Electrochemical Society. [DOI: 10.1149/2.003307ssl] All rights reserved.

키워드

OXIDE
제목
Microstructure and Resistive Switching Behavior of Amorphous Pr0.7Ca0.3MnO3 Films Grown under Various Oxygen Pressures
저자
Choi, Kyu BumLee, Beom-SeokJoung, Mi-RiYoo, Jong HeeKim, WonNahm, Sahn
DOI
10.1149/2.003307ssl
발행일
2013
유형
Article
저널명
ECS Solid State Letters
2
7
페이지
N21 ~ N25