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Reconfigurable Si Nanowire Nonvolatile Transistors
- Park, So Jeong;
- Jeon, Dae-Young;
- Piontek, Sabrina;
- Grube, Matthias;
- Ocker, Johannes;
- ... Kim, Gyu-Tae;
- 외 5명
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28초록
Reconfigurable transistors merge unipolar p- and n-type characteristics of field-effect transistors into a single programmable device. Combinational circuits have shown benefits in area and power consumption by fine-grain reconfiguration of complete logic blocks at runtime. To complement this volatile programming technology, a proof of concept for individually addressable reconfigurable nonvolatile transistors is presented. A charge-trapping stack is incorporated, and four distinct and stable states in a single device are demonstrated.
키워드
intrinsic silicon nanowires; nonvolatile transistors; reconfigurable field effect transistors; reconfigurable memory; Schottky barrier; SILICON NANOWIRE; SONOS MEMORY; BARRIER
- 제목
- Reconfigurable Si Nanowire Nonvolatile Transistors
- 저자
- Park, So Jeong; Jeon, Dae-Young; Piontek, Sabrina; Grube, Matthias; Ocker, Johannes; Sessi, Violetta; Heinzig, Andre; Trommer, Jens; Kim, Gyu-Tae; Mikolajick, Thomas; Weber, Walter M.
- 발행일
- 2018-01
- 유형
- Article
- 권
- 4
- 호
- 1
- 언어
- ENG
- 출판사
- WILEY
- 발행국가
- 미국
- ISSN
- P 2199-160X