Reconfigurable Si Nanowire Nonvolatile Transistors

  • Park, So Jeong; 
  • Jeon, Dae-Young; 
  • Piontek, Sabrina; 
  • Grube, Matthias; 
  • Ocker, Johannes; 
  • ... Kim, Gyu-Tae; 
  • 외 5명
Citations

WEB OF SCIENCE

25
Citations

SCOPUS

28

초록

Reconfigurable transistors merge unipolar p- and n-type characteristics of field-effect transistors into a single programmable device. Combinational circuits have shown benefits in area and power consumption by fine-grain reconfiguration of complete logic blocks at runtime. To complement this volatile programming technology, a proof of concept for individually addressable reconfigurable nonvolatile transistors is presented. A charge-trapping stack is incorporated, and four distinct and stable states in a single device are demonstrated.

키워드

intrinsic silicon nanowires; nonvolatile transistors; reconfigurable field effect transistors; reconfigurable memory; Schottky barrier; SILICON NANOWIRE; SONOS MEMORY; BARRIER
제목
Reconfigurable Si Nanowire Nonvolatile Transistors
저자
Park, So Jeong; Jeon, Dae-Young; Piontek, Sabrina; Grube, Matthias; Ocker, Johannes; Sessi, Violetta; Heinzig, Andre; Trommer, Jens; Kim, Gyu-Tae; Mikolajick, Thomas; Weber, Walter M.
DOI
10.1002/aelm.201700399
발행일
2018-01
유형
Article
저널명
Advanced Electronic Materials
권
4
호
1