Integrated all-organic 8 x 8 one transistor-one resistor (1T-1R) crossbar resistive switching memory array

  • Ji, Yongsung; 
  • Cha, An-Na; 
  • Lee, Sang-A; 
  • Bae, Sukang; 
  • Lee, Sang Hyun; 
  • ... Wang, Gunuk; 
  • 외 3명
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초록

Cross-bar array organic resistive memory devices enable high storage density but suffer from the issue of undesired cross-talk. A one transistor-one resistor (1T-1R) architecture offers a potential solution to this issue. However, all organic based 1T-1R architecture has not yet been demonstrated due to the difficulties in fabrication and operational voltage range mismatching between organic resistive memory and organic transistor. Herein, we demonstrate the first all-organic based 64 bit memory cell array utilizing 1T-1R architecture. The transfer and output curves of transistors in the 1T-1R cell array are governed by the memory cell and the 64 bit array show precise addressing due to gating of transistors. Moreover, the 1T-1R cell array encoded letters based on the standard ASCII character code. (C) 2015 Elsevier B.V. All rights reserved.

키워드

Nonvolatile memory; Organic resistive memory; One transistor-one resistor architecture; NONVOLATILE MEMORY; DEVICES; DIODE
제목
Integrated all-organic 8 x 8 one transistor-one resistor (1T-1R) crossbar resistive switching memory array
저자
Ji, Yongsung; Cha, An-Na; Lee, Sang-A; Bae, Sukang; Lee, Sang Hyun; Lee, Dong Su; Choi, Hyejung; Wang, Gunuk; Kim, Tae-Wook
DOI
10.1016/j.orgel.2015.11.020
발행일
2016-02
유형
Article
저널명
Organic Electronics
권
29
페이지
66 ~ 71