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Integrated all-organic 8 x 8 one transistor-one resistor (1T-1R) crossbar resistive switching memory array
- Ji, Yongsung;
- Cha, An-Na;
- Lee, Sang-A;
- Bae, Sukang;
- Lee, Sang Hyun;
- ... Wang, Gunuk;
- 외 3명
WEB OF SCIENCE
10SCOPUS
10초록
Cross-bar array organic resistive memory devices enable high storage density but suffer from the issue of undesired cross-talk. A one transistor-one resistor (1T-1R) architecture offers a potential solution to this issue. However, all organic based 1T-1R architecture has not yet been demonstrated due to the difficulties in fabrication and operational voltage range mismatching between organic resistive memory and organic transistor. Herein, we demonstrate the first all-organic based 64 bit memory cell array utilizing 1T-1R architecture. The transfer and output curves of transistors in the 1T-1R cell array are governed by the memory cell and the 64 bit array show precise addressing due to gating of transistors. Moreover, the 1T-1R cell array encoded letters based on the standard ASCII character code. (C) 2015 Elsevier B.V. All rights reserved.
키워드
- 제목
- Integrated all-organic 8 x 8 one transistor-one resistor (1T-1R) crossbar resistive switching memory array
- 저자
- Ji, Yongsung; Cha, An-Na; Lee, Sang-A; Bae, Sukang; Lee, Sang Hyun; Lee, Dong Su; Choi, Hyejung; Wang, Gunuk; Kim, Tae-Wook
- 발행일
- 2016-02
- 유형
- Article
- 권
- 29
- 페이지
- 66 ~ 71
- 언어
- ENG
- 출판사
- ELSEVIER SCIENCE BV
- 발행국가
- 네덜란드
- 분량
- 6 페이지
- ISSN
- E 1878-5530
P 1566-1199