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Effects of the AlSb Buffer Layer and the InAs Channel Thickness on the Electrical Properties of InAs/AlSb-Based 2-DEG HEMT Structures
- Shin, S. H.;
- Lim, J. Y.;
- Song, J. D.;
- Kim, H. J.;
- Han, S. H.;
- ... Kim, T. G.
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5초록
In this study, the effects of various AlSb buffer layers and InAs channel thicknesses on the electrical properties of InAs/AlSb-based 2-dimensional-electron-gas (2-DEG) inverted-High Electron Mobility Transistor (HEMT) structures for applications to spin-Field Effective Transistor (FET) is reported. The optimized similar to 11-nm-thick InAs/AlSb HEMT on AlSb (0.5 mu m)/10 repetition of GaSb/AlSb superlattices/AlSb (1 mu m) shows noticeable values of the electron mobility (similar to 106,900 cm(2)/Vs at 77 K and 25,870 cm(2)/Vs at 300 K) and those are comparable to the state-of-the-art, considering impurity scattering due to doping.
키워드
Molecular beam epitaxy; AlSb; InAs; 2-DEG; HEMT; MOBILITY TRANSISTORS; ALSB/INAS HEMTS; OHMIC CONTACTS; INTERFACE; TRANSPORT
- 제목
- Effects of the AlSb Buffer Layer and the InAs Channel Thickness on the Electrical Properties of InAs/AlSb-Based 2-DEG HEMT Structures
- 저자
- Shin, S. H.; Lim, J. Y.; Song, J. D.; Kim, H. J.; Han, S. H.; Kim, T. G.
- 발행일
- 2008-11
- 유형
- Article
- 권
- 53
- 호
- 5
- 페이지
- 2719 ~ 2724