Annealing effect of GaN on reactive ion beam treated sapphire substrate

제목
Annealing effect of GaN on reactive ion beam treated sapphire substrate
저자
BYUN, Dong Jin
학회명
The Fourth International Conference on Nitride Semiconductors
개최지
The Fourth International Conference on Nitride Semiconductors
학회 개최일
2001-07-16 ~ 2001-07-20