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Annealing effect of GaN on reactive ion beam treated sapphire substrate
- 제목
- Annealing effect of GaN on reactive ion beam treated sapphire substrate
- 저자
- BYUN, Dong Jin
- 학회명
- The Fourth International Conference on Nitride Semiconductors
- 개최지
- The Fourth International Conference on Nitride Semiconductors
- 학회 개최일
- 2001-07-16 ~ 2001-07-20