Enhanced switching window for DIBS-grown Al/Y2O3/GZO memristor

초록

In this letter, we report a dual ion beam sputtered Y2O3 memristor, which exhibits stable bipolar resistive switching governed by the filamentary switching mechanism. The obtained experimental data reveal that the fabricated devices show large memory switching window (>10(5)) with excellent endurance (>5 x 10(4) cycles) and retention (>10(6) s) properties by maintaining a high value of the ON/OFF ratio. Moreover, C-AFM analysis also confirms that the fabricated devices exhibit filamentary switching. The fabricated devices efficiently emulate the synaptic learning behavior with better linearity in weight update.

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