pi-Conjugated organic-based devices with different layered structures produced by the neutral cluster beam deposition method and operating conduction mechanism

  • Seo, Hoon-Seok
  • Oh, Jeong-Do
  • Kim, Dae-Kyu
  • Shin, Eun-Sol
  • Choi, Jong-Ho
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초록

The authors report on the systematic characterization of structural effects of organic complementary inverters based on two pi-conjugated organic molecules, pentacene and copper hexadecafluorophthalocyanine (F16CuPc). Three classes of inverters with different layered structures in top-contact configuration were produced using the neutral cluster beam deposition method. Their voltage transfer characteristics, gain curves and hysteresis behaviour were characterized with respect to their thickness. Class I inverters, with generic structures of single-layered, p- and n-type (200/180 angstrom) transistors, exhibited high gains of 12.8 +/- 1.0 with sharp inversions. Their two constituent transistors, with hole and electron mobilities of 0.38 cm(2) V-1 s(-1) and 7.0 x 10(-3) cm(2) V-1 s(-1), respectively, showed well-coupled carrier conduction during operation. The behaviour of class II and III inverters, with layered heterojunction structures, was independent of upper-layer thickness and did not show hysteresis. The better performances of class II inverters, which showed high gains of 14.4 +/- 1.1, were rationalized partly in terms of decreased mobility differences between their constituent transistors. Heterojunction geometries can be applied to obtain high-performance, fast-switching inverters by avoiding direct exposure of the air-sensitive transistors to ambient conditions. The inverters' general operating conduction mechanism is also discussed.

키워드

FIELD-EFFECT TRANSISTORSTHIN-FILM TRANSISTORSLOGIC-CIRCUITSCHANNELFABRICATIONINVERTER
제목
pi-Conjugated organic-based devices with different layered structures produced by the neutral cluster beam deposition method and operating conduction mechanism
저자
Seo, Hoon-SeokOh, Jeong-DoKim, Dae-KyuShin, Eun-SolChoi, Jong-Ho
DOI
10.1088/0022-3727/45/50/505108
발행일
2012-12-19
유형
Article
저널명
Journal of Physics D: Applied Physics
45
50