UV ozone treatment for improving contact resistance on graphene

  • Chen, Chung Wei
  • Ren, Fan
  • Chi, Gou-Chung
  • Hung, Sheng-Chun
  • Huang, Y. P.
  • 외 3명
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초록

Optimized UV ozone cleaning of graphene layers on SiO2/Si substrates is shown to improve contact resistance of e-beam evaporated Ti/Au contacts by three orders of magnitude (3 x 10(-6) Omega-cm(2)) compared to untreated surfaces (4 x 10(-3) Omega-cm(2)). Subsequent annealing at 300 degrees C lowers the minimum value achieved to 7 x 10(-7) Omega-cm(2). Ozone exposure beyond an optimum time (6 min in these experiments) led to a sharp increase in sheet resistance of the graphene, producing degraded contact resistance. The UV ozone treatment is a simple and effective method for producing high quality contacts to graphene. (C) 2012 American Vacuum Society. [http://dx.doi.org/10.1116/1.4754566]

키워드

SINGLE-LAYER GRAPHENEOXIDE
제목
UV ozone treatment for improving contact resistance on graphene
저자
Chen, Chung WeiRen, FanChi, Gou-ChungHung, Sheng-ChunHuang, Y. P.Kim, JihyunKravchenko, Ivan I.Pearton, Stephen J.
DOI
10.1116/1.4754566
발행일
2012-11
유형
Article
저널명
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
30
6