Growth behavior and thermally stable electrical properties of TiNbO5 nanosheet thin films grown using the electrophoretic method

초록

TiNbO5 (TNO) thin films were deposited by electrophoresis at room temperature by using TNO- nanosheets. These TNO films exhibited a large (001) interplanar distance (1.18 nm) owing to the presence of TBA(+) between the TNO layers. The TBA(+), which were used to synthesize the TNO- nanosheets, were removed from the TNO film after annealing at 600 degrees C. Two types of structures were developed in the film annealed at 600 degrees C: type-1 and type-2, which revealed (001) interplanar distances of 0.52 and 0.71 nm, respectively. The TNO film annealed at 600 degrees C showed a dielectric constant of 48.5, low dielectric loss (0.02), and small leakage current density of 4.16 x 10(-7) A/cm(2) at 0.6 MV/cm. The dielectric properties were stable with respect to the film thickness and the applied electric field; the dielectric and insulation properties were maintained up to 300 degrees C. Therefore, TNO films are good candidates for high-temperature capacitors.

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