High yield production of semiconducting p-type single-walled carbon nanotube thin-film transistors on a flexible polyimide substrate by tuning the density of ferritin catalysts

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초록

We report on a simple method for fabricating pure p-type single-walled carbon nanotube (SWCNT) thin-film transistors (TFTs) on flexible polyimide substrates without selective removal of metallic SWCNTs from the as-grown CNT films. The density of the SWCNTs was controlled by tuning the concentration of ferritin catalyst, resulting in the control of the metallic percolation pathways in the SWCNT TFTs. For a ferritin solution diluted by 112000, approximately 60% of the pristine SWCNT TFTs showed p-type behavior with larger on/off current ratios, (I-on/I-off > 10(4)) and a high photosensitivity to the exposure of UV/visible light. (C) 2011 Elsevier Ltd. All rights reserved.

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제목
High yield production of semiconducting p-type single-walled carbon nanotube thin-film transistors on a flexible polyimide substrate by tuning the density of ferritin catalysts
저자
Park, JaehyunYoon, JangyeolKang, Seong JunKim, Gyu-TaeHa, Jeong Sook
DOI
10.1016/j.carbon.2011.02.019
발행일
2011-06
유형
Article
저널명
Carbon
49
7
페이지
2492 ~ 2498