Diffusion induced grain-boundary migration in SrO-doped CeO2 electrolyte and its effect on electrical properties

Cho, Pyeong-Seok; Park, Seung-Young; Kim, Jeong-Joo; Do, Hyoung-Seok; Park, Hyun-Min; Lee, Jong-Heun

doi:10.1016/j.ssi.2010.07.033

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Diffusion induced grain-boundary migration in SrO-doped CeO2 electrolyte and its effect on electrical properties

Cho, Pyeong-Seok;
Park, Seung-Young;
Kim, Jeong-Joo;
Do, Hyoung-Seok;
Park, Hyun-Min;
외 1명

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초록

Diffusion induced grain-boundary migration (DIGM) was observed when 4 and 9 mol% SrO-doped CeO2 (SrDC) ceramics were heat-treated at 1300 degrees C after sintering at 1600 degrees C. In the 9 mol% SrDC specimen, the curvature and distance of boundary migration were increased significantly as the heat-treatment time was increased from 10 min to 10 h at 1300 degrees C. This induced a -2.9-fold increase of the apparent grain-boundary resistivity, which was explained by the physico-chemical change of the grain-boundary structure and/or the current constriction effect due to the undulated boundary morphology. (C) 2010 Elsevier B.V. All rights reserved.

키워드

Diffusion induced grain-boundary migration; SrO-doped CeO2; Complex Impedance Spectroscopy; Grain-boundary conduction; PLZT CERAMICS; MICROSTRUCTURE; SYSTEM; MODE; CU

제목: Diffusion induced grain-boundary migration in SrO-doped CeO2 electrolyte and its effect on electrical properties

저자: Cho, Pyeong-Seok; Park, Seung-Young; Kim, Jeong-Joo; Do, Hyoung-Seok; Park, Hyun-Min; Lee, Jong-Heun

DOI: 10.1016/j.ssi.2010.07.033

발행일: 2010-10-07

유형: Article

저널명: Solid State Ionics

권: 181

호: 31-32

페이지: 1420 ~ 1424