High-efficiency GaN-based light-emitting diodes fabricated with metallic hybrid reflectors

초록

We report on high-efficiency GaN-based light-emitting diodes (LEDs) fabricated with metallic hybrid reflectors (MHRs). It is shown that the MHRs consisting of an injection part (with low p-contact resistance and intermediate reflectance) and a spreading part (with high p-contact resistance and good reflectance) can enhance current injection and overall light reflectivity. Compared with reference LEDs with single reflectors, LEDs fabricated with Ag-based MHRs give higher output power by 8.9% and a reduction in forward voltage by 0.02 V (at 20 ntA), resulting in the improvement of the power efficiency by similar to 10%.

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