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Memory characteristics of Pt nanoparticle-embedded MOS capacitors fabricated at room temperature
- Kim, S.;
- Cho, K.;
- Kwak, K.;
- Kim, S.
Citations
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6초록
In this study, we fabricate Pt nanoparticle (NP)-embedded MOS capacitors at room temperature and investigate their memory characteristics. The Pt NPs are separated from each other and situated between the tunnel and control oxide layers. The average size and density of the Pt NPs are 4 nm and 3.2×10 12 cm -2, respectively. Counterclockwise hysteresis with a width of 3.3 V is observed in the high-frequency capacitance-voltage curve of the Pt NP-embedded MOS capacitor. Moreover, more than 93% of the charge remains even after 10 4 s. © 2012 KIEEME. All rights reserved.
키워드
Memory; Nanoparticle; Pt; Sputter; Average size; Capacitance-voltage curve; High frequency HF; Oxide layer; Pt nanoparticles; Room temperature; Sputter; Data storage equipment; Dielectric devices; Nanoparticles; Platinum; MOS capacitors
- 제목
- Memory characteristics of Pt nanoparticle-embedded MOS capacitors fabricated at room temperature
- 저자
- Kim, S.; Cho, K.; Kwak, K.; Kim, S.
- 발행일
- 2012
- 유형
- Article
- 권
- 13
- 호
- 3
- 페이지
- 162 ~ 164
- 언어
- ENG
- 발행국가
- 미국
- 분량
- 3 페이지
- ISSN
- E 2092-7592
P 1229-7607