Realization of Self-Rectifying and Self-Powered Resistive Random-Access Memory Memristor Using [001]-Oriented NaNbO₃ Film Deposited on Sr₂Nb₃O₁₀ Nanosheet at Low Temperatures

초록

[001]-oriented NaNbO3 films are deposited on Sr2Nb3O10/TiN/SiO2/Si substrates at 300 degrees C. The Sr2Nb3O10 nanosheets are used as a template to form crystalline NaNbO3 films at low temperature. The NaNbO3 films deposited on one Sr2Nb3O10 monolayer exhibit a bipolar switching curve due to the construction and destruction of oxygen vacancy filaments. Because the Sr2Nb3O10 monolayer does not act as an insulating layer, the film does not exhibit self-rectifying properties. Self-rectifying properties are observed in the NaNbO3 memristor, which forms on two Sr2Nb3O10 monolayers that act as tunnel barriers in the memristor. The memristor exhibits extensive rectification and on/off ratios of 48 and 15.7, respectively. Tunneling is the current conduction mechanism of the device in the low-resistance state, and Schottky emission and tunneling are responsible for the conduction mechanism in the high-resistance state at low and high voltages, respectively. The piezoelectric nanogenerator produced using the [001]-oriented NaNbO3 film generates high voltage (1.8 V) and power (3.2 mu W). Furthermore, endurance of the resistive random-access memory and nonlinear transmission characteristics of the biological synapse are accomplished in the NaNbO3 memristor powered by the NaNbO3 nanogenerator. Therefore, the [001]-oriented crystalline NaNbO3 film formed at 300 degrees C may be utilized for self-rectifying and self-powered artificial synapses.

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