Phase change and electrical characteristics of Ge-Se-Te alloys

Lee, Eui-Bok; Ju, Byeong-Kwon; Kim, Yong-Tae

doi:10.1016/j.mee.2009.03.089

상세 보기

Phase change and electrical characteristics of Ge-Se-Te alloys

Lee, Eui-Bok;
Ju, Byeong-Kwon;
Kim, Yong-Tae

Citations

WEB OF SCIENCE

15

Citations

SCOPUS

15

초록

Effects of Se contents in Ge-Se-Te ternary systems are investigated using edge contact type phase change random access memory cell structures. Increasing the Se content from 6 to 35 at% crystallization temperature and Ovonic switching threshold voltage are increased due to the large grain growth of hexagonal microstructure in the Ge-Se-Te alloys. (C) 2009 Elsevier B.V. All rights reserved.

키워드

Phase change materials; Ge-Se-Te alloys; Chalcogenide; MEMORY; CRYSTALLIZATION; SB

제목: Phase change and electrical characteristics of Ge-Se-Te alloys

저자: Lee, Eui-Bok; Ju, Byeong-Kwon; Kim, Yong-Tae

DOI: 10.1016/j.mee.2009.03.089

발행일: 2009-07

유형: Article; Proceedings Paper

저널명: Microelectronic Engineering

권: 86

호: 7-9

페이지: 1950 ~ 1953