Investigation on the Performance of Vanadium-InZnO Thin Film Transistors Fabricated by Sol-Gel Method

초록

We have investigated the Influence of the annealing temperature and incorporation of vanadium contents on the electrical properties of solution processed vanadium-indium-zinc oxide (VIZO) thin-film transistors (TFTs). At 300 degrees C annealing, the VIZO TFTs shows on/off ratio of 1.6 x 10(6) and filed effect mobility of 1.49 cm(2)/Vs. The threshold voltage (Vth) is shifted toward a negative direction and a field-effect mobility (mu(FE)) was increased with the increase of annealing temperature. Chemical, physical and electrical analysis on VIZO films and TFTs at various annealing temperatures were executed and compared. Vanadium could be expected to be role as a carrier suppressor in the VIZO system. This proposed that the performance of VIZO TFTs can be controlled by the V molar ratio in the VIZO based TFTs.

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