주사형 탐침 현미경을 이용한 Ru(0001) 위 그래핀의에피탁시얼 성장 조건에 대한 연구

초록

Epitaxial graphene on metal substrates provides excellent platforms to study its atomic and electronic structures, and can be grown either by surface segregation of carbon or by chemical vapor deposition. The growth behaviors of the two methods, however, have not been directly compared each other. Here, we studied domain structures of graphene grown by three different methods, surface segregation, post-annealing with adsorbed ethylene, and high-temperature dose of ethylene, using scanning tunneling microscopy. The first two methods resulted in graphene regions with areas of 100 nm2, whereas the third method showed large area graphene (＞104 nm2) with regular hexagonal Moiré patterns, implying that high-temperature dose of ethylene is preferable for further studies on graphene such as additional growth of organic molecules.

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