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A 0.3V-V-IN, 0.015ps-FoM Fully Integrated Analog-Assisted Digital LDO With Dual-Negative Gate Control and Adaptive Transient Recovery Path
- Park, Hyunjun;
- Jung, Woojoong;
- Kim, Minsu;
- Kim, Seki;
- Lee, Hyongmin;
- ... Lee, Hyung-Min;
- 외 2명
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11초록
This letter presents a fully integrated analog-assisted (AA) digital low-dropout regulator (DLDO) to operate at low input voltage (V-IN) with fast transient response. A negative voltage gate driver (NVGD) enables low-V-DS triode operation and large current capacity of pass transistors even at low V-IN of 0.3 V by utilizing a negative voltage. Adual negative voltage tank(DNVT) compensates for leakage in NVGD for reliable output regulation. An adaptive transient recovery path (ATRP) in AA loops expedites output voltage (V-OUT) regulation against a large load current (I-LOAD) step. The negative supply fromDNVTalso enhances inverter-based comparators in ATRP at low V-IN. The proposed DLDO fabricated in a 28 nm complementary metal-oxide-semiconductor (CMOS) process operates at lowest V-IN of 0.3-1 V with 50 mV dropout among state-of-the-art DLDOs. The DLDO consumes quiescent current of 23 mu A, while providing large I-LOAD up to 800 mA. The ATRP ensures small V-OUT droop of 97 mV against Delta ILOAD of 380 mA, achieving a low figure-of-merit (FoM) of 0.015 ps.
키워드
- 제목
- A 0.3V-V-IN, 0.015ps-FoM Fully Integrated Analog-Assisted Digital LDO With Dual-Negative Gate Control and Adaptive Transient Recovery Path
- 저자
- Park, Hyunjun; Jung, Woojoong; Kim, Minsu; Kim, Seki; Lee, Hyongmin; Kim, Sangho; Lee, Jongwoo; Lee, Hyung-Min
- 발행일
- 2023-01-01
- 유형
- Article
- 권
- 38
- 호
- 1
- 페이지
- 85 ~ 89