Improvement of photon extraction efficiency of GaN-based LED using micro and nano complex polymer structures

초록

A micro-and nanoscale complex structure made of a high refractive index polymer (n = 2.08) was formed on the ITO electrode layer of an edge-emitting type GaN blue light-emitting diode (LED), in order to improve the photon extraction efficiency by suppressing total internal reflection of photons. The nanoimprint lithography process was used to form the micro-and nanoscale complex structures, using a polymer resin with dispersed TiO2 nanoparticles as an imprint resin. Plasma processing, such as reactive ion etching, was used to form the micro-and nano-scale complex structure; thus, plasma-induced damage to the LED device can be avoided. Due to the high refractive index polymeric micro-and nanostructure on the ITO layer, the electroluminescence emission was increased up to 20%, compared to an identical LED that was grown on a patterned sapphire substrate to improve photon extraction efficiency.

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