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Control of dislocation density of GaN used Epitaxial Lateral Overgrowth with carbonized PR mask
Control of dislocation density of GaN used Epitaxial Lateral Overgrowth with carbonized PR mask
- 제목
- Control of dislocation density of GaN used Epitaxial Lateral Overgrowth with carbonized PR mask
- 제목 (타언어)
- Control of dislocation density of GaN used Epitaxial Lateral Overgrowth with carbonized PR mask
- 저자
- BYUN, Dong Jin
- 발행일
- 2013-07-03
- 학회명
- The 16th International Symposium on the Physics of Semiconductors and Applications
- 개최국가
- 대한민국
- 학회 개최일
- 2013-07-02 ~ 2013-07-05