상세 보기
150-GHz 28-nm CMOS Reflection-Type Phase Shifter Design Suitable for Low-Q Varactor
- Kim, Yangwoo;
- Lee, Junghyun;
- Kim, Moonil
Citations
WEB OF SCIENCE
0Citations
SCOPUS
0초록
This paper presents the design and implementation of a D-band CMOS phase shifter based on a parallel reflective-load topology. Two phase-shifting architectures are explored, namely a 360 degrees continuously tunable phase shifter and a 180 degrees phase shifter combined with a phase inverter, enabling full 360 degrees phase coverage. The circuit was simplified, and the number of bias lines was minimized to facilitate future array circuit implementation. In addition, a serial peripheral interface (SPI) circuit is implemented to simplify bias control and reduce the number of external connections during array chip packaging.
키워드
reflective type phase shifter; D-band; CMOS
- 제목
- 150-GHz 28-nm CMOS Reflection-Type Phase Shifter Design Suitable for Low-Q Varactor
- 저자
- Kim, Yangwoo; Lee, Junghyun; Kim, Moonil
- 발행일
- 2025-10-31
- 유형
- Article
- 권
- 14
- 호
- 21