150-GHz 28-nm CMOS Reflection-Type Phase Shifter Design Suitable for Low-Q Varactor

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초록

This paper presents the design and implementation of a D-band CMOS phase shifter based on a parallel reflective-load topology. Two phase-shifting architectures are explored, namely a 360 degrees continuously tunable phase shifter and a 180 degrees phase shifter combined with a phase inverter, enabling full 360 degrees phase coverage. The circuit was simplified, and the number of bias lines was minimized to facilitate future array circuit implementation. In addition, a serial peripheral interface (SPI) circuit is implemented to simplify bias control and reduce the number of external connections during array chip packaging.

키워드

reflective type phase shifter; D-band; CMOS
제목
150-GHz 28-nm CMOS Reflection-Type Phase Shifter Design Suitable for Low-Q Varactor
저자
Kim, Yangwoo; Lee, Junghyun; Kim, Moonil
DOI
10.3390/electronics14214280
발행일
2025-10-31
유형
Article
저널명
Electronics (Basel)
권
14
호
21