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Reactive ion (N2+) beam treatment of sapphire for GaN deposition
- 제목
- Reactive ion (N2+) beam treatment of sapphire for GaN deposition
- 저자
- BYUN, Dong Jin
- 학회명
- Proceedings of The Second International Conference on Nitride Semiconductors
- 개최지
- Tokushima, Japan
- 학회 개최일
- 1997-10-27 ~ 1997-10-31