Flexible Logic Gates Composed of Si-Nanowire-Based Memristive Switches

  • Moon, Taeho; 
  • Jung, Ji-Chul; 
  • Han, Yong; 
  • Jeon, Youngin; 
  • Koo, Sang-Mo; 
  • ... Kim, Sangsig
Citations

WEB OF SCIENCE

7
Citations

SCOPUS

8

초록

The flexible logic circuit configured using Si-based memristive switches is demonstrated. The memristive switches consisting of Ag/a-Si/heavily doped p-type Si are constructed on plastic using top-down-fabricated Si nanowires. The logic gate analyses provide insight toward logic circuits having multifunctionality and high connectivity through a crossbar-array architecture. With the strong stability of the logic performances against external strain, the memristive switch looks promising as a building block for flexible electronics.

키워드

Flexible electronics; logic gate; memristive switches; Si nanowire (NW); top-down approach; MEMORY
제목
Flexible Logic Gates Composed of Si-Nanowire-Based Memristive Switches
저자
Moon, Taeho; Jung, Ji-Chul; Han, Yong; Jeon, Youngin; Koo, Sang-Mo; Kim, Sangsig
DOI
10.1109/TED.2012.2220778
발행일
2012-12
유형
Article
저널명
IEEE Transactions on Electron Devices
권
59
호
12
페이지
3288 ~ 3291