Flexible Logic Gates Composed of Si-Nanowire-Based Memristive Switches

  • Moon, Taeho
  • Jung, Ji-Chul
  • Han, Yong
  • Jeon, Youngin
  • Koo, Sang-Mo
  • ... Kim, Sangsig
Citations

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초록

The flexible logic circuit configured using Si-based memristive switches is demonstrated. The memristive switches consisting of Ag/a-Si/heavily doped p-type Si are constructed on plastic using top-down-fabricated Si nanowires. The logic gate analyses provide insight toward logic circuits having multifunctionality and high connectivity through a crossbar-array architecture. With the strong stability of the logic performances against external strain, the memristive switch looks promising as a building block for flexible electronics.

키워드

Flexible electronicslogic gatememristive switchesSi nanowire (NW)top-down approachMEMORY
제목
Flexible Logic Gates Composed of Si-Nanowire-Based Memristive Switches
저자
Moon, TaehoJung, Ji-ChulHan, YongJeon, YounginKoo, Sang-MoKim, Sangsig
DOI
10.1109/TED.2012.2220778
발행일
2012-12
유형
Article
저널명
IEEE Transactions on Electron Devices
59
12
페이지
3288 ~ 3291