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Flexible Logic Gates Composed of Si-Nanowire-Based Memristive Switches
- Moon, Taeho;
- Jung, Ji-Chul;
- Han, Yong;
- Jeon, Youngin;
- Koo, Sang-Mo;
- ... Kim, Sangsig
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8초록
The flexible logic circuit configured using Si-based memristive switches is demonstrated. The memristive switches consisting of Ag/a-Si/heavily doped p-type Si are constructed on plastic using top-down-fabricated Si nanowires. The logic gate analyses provide insight toward logic circuits having multifunctionality and high connectivity through a crossbar-array architecture. With the strong stability of the logic performances against external strain, the memristive switch looks promising as a building block for flexible electronics.
키워드
Flexible electronics; logic gate; memristive switches; Si nanowire (NW); top-down approach; MEMORY
- 제목
- Flexible Logic Gates Composed of Si-Nanowire-Based Memristive Switches
- 저자
- Moon, Taeho; Jung, Ji-Chul; Han, Yong; Jeon, Youngin; Koo, Sang-Mo; Kim, Sangsig
- 발행일
- 2012-12
- 유형
- Article
- 권
- 59
- 호
- 12
- 페이지
- 3288 ~ 3291