Channel access resistance effects on charge carrier mobility and low-frequency noise in a polymethyl methacrylate passivated SnO2 nanowire field-effect transistors

Joo, Min-Kyu; Huh, Junghwan; Mouis, Mireille; Park, So Jeong; Jeon, Dae-Young; Jang, Doyoung; Lee, Jong-Heun; Kim, Gyu-Tae; Ghibaudo, Gerard

doi:10.1063/1.4788708

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Channel access resistance effects on charge carrier mobility and low-frequency noise in a polymethyl methacrylate passivated SnO2 nanowire field-effect transistors

Joo, Min-Kyu;
Huh, Junghwan;
Mouis, Mireille;
Park, So Jeong;
Jeon, Dae-Young;
... Kim, Gyu-Tae;
외 3명

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초록

Channel access resistance (R-sd) effects on the charge carrier mobility (mu) and low-frequency noise (LFN) in a polymethyl-methacrylate (PMMA) passivated tin-oxide nanowire (SnO2-NW) field effect-transistor were investigated. To this end, the Y function method was employed for direct electrical parameters extraction without R-sd influence. Numerical simulation was used to evaluate gate-to-channel capacitance (C-gc) accounting for the electrostatic gate coupling effects through PMMA passivation layer. Furthermore, LFN measurements were carried out to study the SnO2/dielectrics interface. The carrier number fluctuation (CNF) noise model was found appropriate to interpret LFN data provided R-sd influence is included. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4788708]

키워드

TIN OXIDE NANOWIRES; ELECTRONIC TRANSPORT; ELECTRICAL NOISE; RTS FLUCTUATIONS; SURFACE; TEMPERATURE; SENSORS; EXTRACTION; SIMULATION; DEPENDENCE

제목: Channel access resistance effects on charge carrier mobility and low-frequency noise in a polymethyl methacrylate passivated SnO2 nanowire field-effect transistors

저자: Joo, Min-Kyu; Huh, Junghwan; Mouis, Mireille; Park, So Jeong; Jeon, Dae-Young; Jang, Doyoung; Lee, Jong-Heun; Kim, Gyu-Tae; Ghibaudo, Gerard

DOI: 10.1063/1.4788708

발행일: 2013-02-04

유형: Article

저널명: Applied Physics Letters

권: 102

호: 5