Formation of high ultraviolet transparent SrVOx/Ag-based conducting electrode

초록

Sputter-deposited SrVOx was employed to create transparent conducing SrVOx/Ag/SrVOx films and their optical-electrical properties were examined as functions of SrVOx and Ag thicknesses. With the increase in the thickness of SrVOx films from 15 to 45 nm in the SrVOx/Ag/SrVOx films, the carrier concentration, sheet resistance, and electron mobility were in the range of 2.0 x 10(22) - 1.03 x 10(22) cm(-3), 3.15 -2.76 Omega/sq., and 21.99 -19.76 cm(2)/Vs, respectively. The 25 nm-thick SrVOx-based multilayer gave the highest average transmittance (T-av) of 91.5%. The 25 nm-thick SrVOx-based multilayer gave the largest Haacke's figure of merit (FOM) of 144.5 x 10(-3) Omega(-1). With increasing Ag layer thickness from 9 to 21 nm, the carrier concentration, mobility and sheet resistance of the multilayers were in the range of 1.05 x 10(22) - 1.99 x 10(22) cm(-3), 15.56 -22.46 cm(2)/Vs, and 1.97 - 6.48 Omega/sq., respectively. The T-av of the SrVOx (25 nm)/Ag/SrVOx (25 nm) multilayer gradually decreased from 95.5 to 82.6% with the Ag layer thickness. The rigorous coupled-wave (RCW) simulations were performed to describe the wavelength-dependent transmittance characteristics of the SrVOx (25 nm)/Ag (15 nm)/SrVOx (25 nm) samples. Based on the phasor examination, the effect of the SrVOx film thickness on the transmittance characteristics of the multilayers is described and discussed.

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